vs-stps40l15ctpbf, VS-STPS40L15CT-N3 www.vishay.com vishay semiconductors revision: 30-aug-11 1 document number: 94330 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 2 x 20 a features ? 125 c t j operation (v r < 5 v) ? optimized for or-ing applications ? ultra low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description the center tap schottky rectifie r module has been optimized for ultra low forward voltage dro p specifically for the or-ing of parallel power supplie s. the proprietary barrier technology allows for reliable operation up to 125 c junction temperature. typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. product summary package to-220ab i f(av) 2 x 20 a v r 15 v v f at i f see electrical table i rm max. 600 ma at 100 c t j max. 125 c diode variation common cathode e as 10 mj anode 13 2 base common cathode 2 common cathode anode to-220ab major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 40 a v rrm 15 v i fsm t p = 5 s sine 700 a v f 19 a pk , t j = 125 c (per leg, typical) 0.25 v t j - 55 to 125 c voltage ratings parameter symbol vs-stps40l15ctpbf VS-STPS40L15CT-N3 units maximum dc reverse voltage v r 15 15 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current see fig. 5 per leg i f(av) 50 % duty cycle at t c = 85 c, rectangular waveform 20 a per device 40 maximum peak one cycle non-repetitive surge current per leg see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 700 10 ms sine or 6 ms rect. pulse 330 repetitive avalanche current per leg i ar current decaying linear ly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 2 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 2 a, l = 6 mh 10 mj
vs-stps40l15ctpbf, VS-STPS40L15CT-N3 www.vishay.com vishay semiconductors revision: 30-aug-11 2 document number: 94330 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions typ. max. units forward voltage drop per leg see fig. 1 v fm (1) 19 a t j = 25 c -0.41 v 40 a - 0.52 19 a t j = 125 c 0.25 0.33 40 a 0.37 0.50 reverse leakage current per leg see fig. 2 i rm (1) t j = 25 c v r = rated v r -10 ma t j = 100 c - 600 threshold voltage v f(to) t j = t j maximum 0.182 v forward slope resistance r t 7.6 m ? maximum junction capacitance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c - 2000 pf typical series inductance per leg l s measured lead to lead 5 mm from package body 8 - nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 55 to 125 c maximum storage temperature range t stg - 55 to 150 maximum thermal resistance, junction to case per leg r thjc dc operation see fig. 4 1.5 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased (only for to-220) 0.50 maximum thermal resistance, junction to ambient r thja dc operation (for d 2 pak and to-262) 40 approximate weight 2g 0.07 oz. mounting torque minimum non-lubricated threads 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ab stps40l15ct
vs-stps40l15ctpbf, VS-STPS40L15CT-N3 www.vishay.com vishay semiconductors revision: 30-aug-11 3 document number: 94330 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristic s fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 1.6 0.4 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 100 0 0.2 0.6 0. 8 1.0 t j = 125 c t j = 75 c t j = 25 c 1.2 1.4 1000 0.1 1 10 100 0 v r - reverse voltage (v) i r - reverse current (ma) 15 12 369 t j = 100 c t j = 75 c t j = 50 c t j = 25 c 1000 1000 010 100 v r - reverse voltage (v) c t - junction capacitance (pf) 51520 10 000 t j = 25 c 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 10 0.01 single p u lse (thermal resistance) . p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 100
vs-stps40l15ctpbf, VS-STPS40L15CT-N3 www.vishay.com vishay semiconductors revision: 30-aug-11 4 document number: 94330 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-re petitive surge current fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 70 024 i f(av) - average forward current (a) allowable case temperature (c) 75 90 8 5 100 8 0 95 16 12 8 4 see note (1) s qu are w a v e (d = 0.50) 20 14 0 025 average power loss (w) i f(av) - average forward current (a) 5 101520 2 10 d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 rms limit dc 30 4 6 8 12 1000 100 1000 t p - square wave pulse duration (s) i fsm - non-repetitive surge current (a) 100 10 000 10 at any rated load condition and w ith rated v rrm applied follo w ing s u rge c u rrent monitor high-speed s w itch d.u.t. r g = 25 + free w heel diode v d = 25 v l irfp460 40hfl40s02
vs-stps40l15ctpbf, VS-STPS40L15CT-N3 www.vishay.com vishay semiconductors revision: 30-aug-11 5 document number: 94330 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-stps40l15ctpbf 50 1000 anti static plastic tube VS-STPS40L15CT-N3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95222 part marking information to-220ab pbf www.vishay.com/doc?95225 to-220ab -n3 www.vishay.com/doc?95028 - schottky stps series - current rating (40 = 40 a) - l = low voltage drop - voltage rating (15 = 15 v) - ct = essential part number device code 6 2 4 3 5 7 stps 40 l 15 ct pbf vs- 1 - vishay semiconductors product - pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant, and totally lead (pb)-free environmental digit 2 3 4 5 6 7 1
document number: 95222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0.005" ) per side. these dimensions are measured at the outermost extremes of th e plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) dimensions e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to- 220, except a2 (maximum) and d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 ? 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6)
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